THERMAL LATTICE EXPANSION IN EPITAXIAL SrTiO3(100) ON Si(100)
نویسندگان
چکیده
Thermal lattice expansion in epitaxial SrTiO3(100) grown on Si(100) by molecular beam epitaxy was examined by in situ X-ray diffraction (XRD) at temperatures ranging from 25 °C to 1000 °C. The SrTiO3 layer thickness (~400 Å) was determined a priori by ex situ X-ray reflectivity (XRR). In addition, the SrTiO3(100) film was further characterized before and after thermal treatment by Rutherford backscattering spectroscopy in channeling geometry (RBS/C) and transmission electron microscopy (TEM). The XRD results showed that the rate of thermal expansion in epitaxial SrTiO3 in the out-of-plane direction is approximately 1.5-2.0 times the bulk value. In addition, the SrTiO3 film was seen to relax after heating. RBS/C and TEM also revealed the formation of a thick (~1000 Å), amorphous silica layer at the SrTiO3/Si interface. Interestingly, the SrTiO3 film retained its epitaxial form atop this non-templating surface while its crystalline quality improved with annealing. These results will be further discussed in the context of their potential application toward silicon-on-insulator (SOI) semiconductor architecture.
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